| PART |
Description |
Maker |
| W9864G6IH |
1M X 4BANKS X 16BITS SDRAM
|
Winbond
|
| IS42VM16160E |
4M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16320E |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16800H-6BLI IS42VM16800H-75BI IS42VM16800H-7 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 128MX72SDRAMINTEL1.2VERBASE |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Electronic
|
| T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| T436416D T436416D-5C |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| EMLS232UA EMLS232UAW-6 EMLS232UAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
| HDD32M72B18RW-13A HDD32M72B18RW-13B HDD32M72D18RPW |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），6Mx8BanksK的参考依据。，184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
